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PD -95564
IRG4BC20MD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Rugged: 10sec short circuit capable at VGS=15V * Low VCE(on) for 4 to 10kHz applications * IGBT Co-packaged with ultra-soft-recovery antiparallel diode * Industry standard D2Pak package * Lead-Free
C
Short Circuit Rated Fast IGBT
VCES = 600V
G E
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 11A
Benefits
* Offers highest efficiency and short circuit capability for intermediate applications * Provides best efficiency for the mid range frequency (4 to 10kHz) * Optimized for Appliance Motor Drives, Industrial (Short Circuit Proof) Drives and Intermediate Frequency Range Drives * High noise immune "Positive Only" gate driveNegative bias gate drive not necessary * For Low EMI designs- requires little or no snubbing * Single Package switch for bridge circuit applications * Compatible with high voltage Gate Driver IC's * Allows simpler gate drive Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C tsc IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Short Circuit Withstand Time Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
n-channel
D2Pak
Absolute Maximum Ratings
Max.
600 18 11 36 36 7.0 10 36 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s A V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-------------------------
Typ.
----------0.50 ----2 (0.07)
Max.
2.1 2.5 -----80 ------
Units
C/W
g (oz)
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1
07/15/04
IRG4BC20MD-SPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 4.0 VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 3.0 Zero Gate Voltage Collector Current ---ICES ---VFM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---Typ. ---0.67 1.85 2.46 2.07 ----11 3.6 ------1.4 1.3 ---Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, I C = 1.0mA 2.1 IC = 11A VGE = 15V ---V IC = 18A See Fig. 2, 5 ---IC = 11A, TJ = 150C 6.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 11A 250 A VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. ---------------------------------------------------------------Diode Peak Reverse Recovery Current ------Diode Reverse Recovery Charge ------Diode Peak Rate of Fall of Recovery ---During tb ---Typ. 39 5.3 20 21 37 463 340 0.41 2.03 2.44 19 41 590 600 3.49 7.5 460 54 14 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 59 IC = 11A 8.0 nC VCC = 400V See Fig. 8 30 VGE = 15V ---TJ = 25C ---ns IC = 11A, VCC = 480V 690 VGE = 15V, RG = 50 510 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 3.7 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 6.5A, VCC = 480V ---VGE = 15V, RG = 50 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt 200A/s ---- A/s TJ = 25C See Fig. ---TJ = 125C 17
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IRG4BC20MD-SPbF
1.5
Load Current ( A )
1.0
60% of rated voltage
Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 13W
0.5
Ideal diodes
0.0 0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
IC , Collector-to Emitter Current (A)
I C , Collector-to-Emitter Current (A)
10
10
TJ = 150 C
1
T J = 150C TJ = 25C VGE= 15V 20s PULSE WIDTH 0.1 1.0 VCE , Collector-to-Emitter Voltage (V) 10.0
TJ = 25 C
1
0.1
0.1 6 8 10
V CC = 50V 5s PULSE WIDTH
12 14 16
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4BC20MD-SPbF
20
4.0 VGE = 15V 80s PULSE WIDTH
VCE , Collector-to Emitter Voltage (V)
Maximum DC Collector Current(A)
IC = 22A
15
3.0
10
IC = 11A
2.0
5
IC = 5.5A
1.0
0
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80 100 120 140
TC , Case Temperature ( C)
TJ , Junction Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D =t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 t2
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20MD-SPbF
800
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 11A
16
C, Capacitance (pF)
600
Cies
400
12
8
200
Coes Cres
4
0 1 10 100
0 0 10 20 30 40
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
2.5 VCC = 480V VGE = 15V
100 RG = 50 VGE = 15V VCC = 480V 10 IC = 22A IC = 11A IC = 5.5A 1
Total Switching Losses (mJ)
2.4
2.3 0 10 20 30 40 50
Total Switching Losses (mJ)
TJ = 25C I C = 11A
0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG, Gate Resistance ()
T J, Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4BC20MD-SPbF
10.0 RG = 50 TJ = 150C VGE = 15V
100
VGE = 20V T J = 125
Total Switching Losses (mJ)
8.0
6.0
C, Capacitance(pF)
VCC = 480V
SAFE OPERATING AREA
10
4.0
2.0
0.0 5 10 15 20 25
1 1 10 100 1000
IC , Collector Current (A)
VDS, Drain-to-Source Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
10
TJ = 150C TJ = 125C TJ = 25C
1
0.1 0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4BC20MD-SPbF
100
100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
IF = 16A
t rr - (ns)
60
I F = 8.0A
I IRRM - (A)
I F = 16A
10
40
IF = 8.0A I F = 4.0A
I F = 4.0A
20
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 200V TJ = 125C TJ = 25C
400
VR = 200V TJ = 125C TJ = 25C
300
di(rec)M/dt - (A/s)
Q RR - (nC)
I F = 16A
200
IF = 4.0A
1000
IF = 8.0A I F = 16A
I F = 8.0A
100
IF = 4.0A
0 100
100 100
di f /dt - (A/s)
1000
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4BC20MD-SPbF
90% Vge +Vge
Same type device as D.U.T.
Vce
Ic
10% Vce Ic
90% Ic
80% of Vce
430F D.U.T.
td(off) tf
5% Ic
Eoff =
t1+5S Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt tx
tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
Vcc
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
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IRG4BC20MD-SPbF
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4BC20MD-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H L OT CODE 8024 AS S EMBL ED ON WW 02, 2000 IN T HE AS S EMB LY L INE "L" Note: "P" in ass embly line pos ition indicates "Lead-F ree" INT ERNAT IONAL RECT IF IER LOGO AS S EMB LY L OT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
OR
INT E RNAT IONAL RE CT IF IE R LOGO AS SE MBLY LOT CODE PART NUMB ER F 530S DAT E CODE P = DE S IGNAT E S LEAD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WE EK 02 A = AS S EMB LY SIT E CODE
10
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IRG4BC20MD-SPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04
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11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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